By Norbert H. Nickel (Eds.)
Because its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has distinct itself during the cautious choice of famous authors, editors, and participants. The "Willardson and Beer" sequence, because it is celebrated, has succeeded in publishing a variety of landmark volumes and chapters. not just did a lot of those volumes make an impression on the time in their book, yet they remain well-cited years after their unique unencumber. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known specialist within the box of semiconductor fabrics, will extra give a contribution to carrying on with the sequence' culture of publishing well timed, hugely correct, and long-impacting volumes. a few of the contemporary volumes, akin to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this custom could be maintained or even expanded.Reflecting the really interdisciplinary nature of the sector that the sequence covers, the volumes in Semiconductors and Semimetals were and may stay of serious curiosity to physicists, chemists, fabrics scientists, and gadget engineers in smooth undefined. Key good points* offers the main in-depth assurance of hydrogen in silicon on hand in one resource* comprises an intensive bankruptcy at the neutralization of defects in III*b1V semiconductors**Combines either experimental and theoretical experiences to shape a accomplished reference
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Additional resources for Hydrogen in Semiconductors II, 1st Edition
III. EPR of Hydrogen-Related Complexes in Silicon . . . . 1. Hydrogen-Intrinsic Defect Complexes . . . . . . . 2. EPR of Platinum-Hydrogen and Sulfur-Hydrogen Complexes . . 3. ENDOR Spectra of SisH Bonds at the (111) Si Surface . . . 4. ENDOR of Hydrogen in the Oxygen Thermal Donor (NL10) . . IV. Hydrogen-Induced Effects in Silicon . . . . . . . 1. Hydrogen-Associated Shallow Donors in Hydrogen-Implanted Silicon 2. Stress-Induced Alignment of the AA1 Spectrum . . . .
This electron is placed in the reservoir for electrons, which has an energy determined by the Fermi level. The higher the Fermi energy, the more energy it will cost to put an electron in the reservoir, and the higher the formation energy of H> will be. It is therefore easy to see that H> will be most favorable (lowest formation energy) in p-type material, where the Fermi level is low in the gap. 5 eV. The characteristics of isolated interstitial hydrogen also allow us to predict how hydrogen will interact with shallow dopants.
4. ENDOR of Hydrogen in the Oxygen Thermal Donor (NL10) . . IV. Hydrogen-Induced Effects in Silicon . . . . . . . 1. Hydrogen-Associated Shallow Donors in Hydrogen-Implanted Silicon 2. Stress-Induced Alignment of the AA1 Spectrum . . . . . 3. Neutral Charge State of Hydrogen-Associated Donor . . . . 4. EPR Evidence of Hydrogen-Enhanced Diffusion of Al in Silicon . . V. Summary and Conclusions . . . . . . . . . . References . . . . . . . . . . . . . . .