By Alan F. Murray, H. Martin Reekie
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Additional resources for Integrated Circuit Design (Macmillan new electronics series)
It is the ability to charge and discharge this capacitance that determines the performance of an inverter. There are several contributions to this capacitance, but at present we shall consider only the two most important. 7 A CMOS inverter driving a load capacitance Metal interconnect capacitance After the transistor has been fabricated it is covered with a layer of silicon dioxide (insulator) to ensure that any conductive layers that run over the device do not cause any spurious short-circuits.
No attempt will be made to derive the full equations here, as this is treated elegantly in more advanced texts (see the Bibliography at the end of the book). The simplified forms will be made plausible, however, in so far as they describe switching. We shall assume in this treatment that: (1) (2) (3) ( 4) (5) Only drift current is considered. Carrier mobility is constant. Channel doping is uniform. Reverse leakage current is negligible. The transverse field Ez is much greater than the drain-source field Ex.
As more and more complex circuits are constructed, the use of purely combinational logic becomes untenable and it bcomes essential to discipline the movement of signals through the chip. If this is not done, circuits will be designed whose outputs depend on the order in which signals propagate, rather than purely depending on the inputs. This is clearly undesirable. Furthermore, many circuit functions are either difficult or impossible to perform in purely combinational logic and it is necessary to introduce a clock signal to control data flow in the chip.