Laboratory Explorations to Accompany Microelectronic by Vincent C. Gaudet, Kenneth C. Smith

By Vincent C. Gaudet, Kenneth C. Smith

Designed to accompany Microelectronic Circuits, 7th version, by means of Adel S. Sedra and Kenneth C. Smith, Laboratory Explorations invitations scholars to discover the area of real-world engineering via sensible, hands-on experiments.

Taking a "learn-by-doing" procedure, it provides labs that concentrate on the improvement of functional engineering talents and layout practices. Experiments begin from techniques and hand research, and comprise simulation, size, and post-measurement dialogue elements. a whole recommendations guide can also be on hand to adopting instructors.

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Extra info for Laboratory Explorations to Accompany Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering)

Sample text

3: Common-source amplifier circuit, with source-degeneration resistor Rsl, coupling capacitors, and resistor R6 for DCbiasing purposes. 432 S&S. 3 NMOS COMMON-SOURCE AMPLIFIER WITH SOURCE DEGENERATION Design the amplifier to itchieve a snrall-signal gain of at least A, = - 1VlV. , =220Q. lsesr-rppliesof I,i - -L' =15 y. Rsis= 50(). r= l0 kQ, and design the circrlit to lrave 1p = I nA. Obtain the clatasheet fbr the NMOS transistor that will be Lrsed. In your lab book. perfbrm the fblloiving. DC 0perating Point Analgsis .

Ls the calculated vlrltre available irr your kit'l Can you achieve this valtre bl,contbining seleral rcsistclrs'l (lxrnrent. What values of 111 ancl R, do you nescl to use'l ls the problem complctcly speciticd'l Simulation . Sintulate your clrcult rusing thc vulues clf'11,t. Rrr. Rr, attcl R" bascd clu yottr cu lcu la t iotr -. s. 'n, 1",;. aucl 1p. How closely do they ntatch your calcrr latiotts'l Prototgping and Measurement . . Assenrble the circtrit ottt() tt brcitclboarcl. L)sing a cligital ntultimeter'.

4 PMOS AT DC You now have enough infbrnration to caiculirte R,5. Is tlre calculatecl value available in youl kit'l Can you lchieve this value by combining several resistors'l Conrment. You also have enough infbrnration to calculatc Rp. ) (-ommerrt. What values of R1 and /t. do you nec'd to use'l Is the problern completely specilied'l Simulation Sinrulate youl'cilcuit using the vrrlues of'R,r. /iD, Rr. and 1t, basecl ou your calcula tions. Re port thc valucs of l,'5.. L'n. and /r. llorv c,loscly do they nratch your' ca lcr"rlation s'l Prototgping and Measurement .

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