By Christopher K. Ober (Editor), Scott A. MacDonald (Editor), Takao Iwayanagi (Editor), Tadatomi Nishikubo (Editor) Elsa Reichmanis
content material: An research of strategy matters with chemically amplified optimistic resists / O. Nalamasu, A.G. Timko, Elsa Reichmanis, F.M. Houlihan, Anthony E. Novembre, R. Tarascon, N. Münzel, and S.G. Slater --
The annealing thought for environmental stabilization of chemical amplification resists / Hiroshi Ito, Greg Breyta, Donald C. Hofer, and R. Sooriyakumaran --
Structure-property dating of acetal-and ketal-blocked polyvinyl phenols as polymeric binder in two-component optimistic deep-UV photoresists / C. Mertesdorf, N. Münzel, P. Falcigno, H.J. Kirner, B. Nathal, H.T. Schacht, R. Schulz, S.G. Slater, and A. Zettler --
Lithographic results of acid diffusion in chemically amplified resists / C.A. Mack --
Acid diffusion in chemically amplified resists : the impression of prebaking and post-exposure baking temperature / Jiro Nakamura, Hiroshi Ban, and Akinobu Tanaka --
Correlation of the energy of photogenerated acid with the post-exposure hold up influence in positive-tone chemically amplified deep-UV resists / F.M. Houlihan, E. Chin, O. Nalamasu, J.M. Kometani, and R. Harley --
Following the acid : impact of acid floor depletion on phenolic polymers / James W. Thackeray, Mark D. Denison, Theodore H. Fedynyshyn, Doris Kang, and Roger Sinta --
Water-soluble onium salts: new category of acid turbines for chemical amplification confident resists / Toshio Sakamizu, Hiroshi Shiraishi, and Takumi Ueno --
Photoacid and photobase turbines: arylmethyl sulfones and benzhydrylammonium salts / J.E. Hanson, K.H. Jensen, N. Gargiulo, D. Motta, D.A. Pingor, Anthony E. Novembre, David A. Mixon, J.M. Kometani, and C. Knurek --
practical imaging with chemically amplified resists / Alexander M. Vekselman, Chunhao Zhang, and Graham D. Darling --
Hydrogen bonding in sulfone- and N-methylmaleimide-containing withstand polymers with hydroxystyrene and acetoxystyrene : two-dimensional NMR reports / Sharon A. Heffner, Mary E. Galvin, Elsa Reichmanis, Linda Gerena, and Peter A. Mirau --
NMR research of miscibility in novolac-poly(2-methyl-1-pentene sulfone) resists / Sharon A. Heffner, David A. Mixon, Anthony E. Novembre, and Peter A. Mirau --
Styrylmethylsulfonamides : flexible base-solubilizing elements of photoresist resins / Thomas X. Neenan, E.A. Chandross, J.M. Kometani, and O. Nalamasu --
4-Methanesulfonyloxystyrene : a method of enhancing the homes of tert-butoxycarbonyloxystyrene-based polymers for chemically amplified deep-UV resists / J.M. Kometani, F.M. Houlihan, Sharon A. Heffner, E. Chin, and O. Nalamasu --
Dienone-phenol rearrangement response : layout pathway for chemically amplified photoresists / Ying Jiang, John Maher, and David Bassett --
Single-layer withstand for ArF excimer laser publicity containing fragrant compounds / Tohru Ushirogouchi, Takuya Naito, Koji Asakawa, Naomi Shida, Makoto Nakase, and Tsukasa Tada --
layout concerns for 193-nm optimistic resists / Robert D. Allen, I-Y. Wan, Gregory M. Wallraff, Richard A. DiPietro, Donald C. Hofer, and Roderick R. Kunz --
Top-surface imaged resists for 193-nm lithography / Roderick R. Kunz, Susan C. Palmateer, Mark W. Horn, Anthony R. specialty, and Mordechai Rothschild --
Silicon-containing block copolymer withstand fabrics / Allen H. Gabor and Christopher ok. Ober --
A top-surface imaging strategy in response to the light-induced formation of dry-etch limitations / U. Schaedeli, M. Hofmann, E. Tinguely, and N. Münzel --
Plasma-developable photoresist procedure in keeping with polysiloxane formation on the irradiated floor : a liquid-phase deposition procedure / Masamitsu Shirai, Norihiko Nogi, Masahiro Tsunooka, and Takahiro Matsuo --
New polysiloxanes for chemically amplified face up to purposes / J.C. van de Grampel, R. Puyenbroek, A. Meetsma, B.A.C. Rousseeuw, and E.W.J.M. van der glide --
Environmentally pleasant polysilane photoresists / James V. seashore, Douglas A. Loy, Yu-Ling Hsiao, and Robert M. Waymouth --
Fluoropolymers with low dielectric constants : triallyl ether-hydrosiloxane resins / Henry S.-W. Hu, James R. Griffith, Leonard J. Buckley, and Arthur W. Snow --
Photophysics, photochemistry, and intramolecular cost move of polyimides / Masatoshi Hasegawa, Yoichi Shindo, and Tokuko Sugimura --
constitution, houses, and intermolecular cost move of polyimides / Masatoshi Hasegawa, Junichi Ishii, Takahumi Matano, Yoichi Shindo, Tokuko Sugimura, Takao Miwa, Mina Ishida, Yoshiaki Okabe, and Akio Takahashi --
program of polyisoimide as a polyimide precursor to polymer adhesives and photosensitive polymers / Amane Mochizuki and Mitsuru Ueda --
Polyimide nanofoams ready from styrenic block copolymers / J.L. Hedrick, T.P. Russell, C. Hawker, M. Sanchez, ok. Carter, Richard A. DiPietro, and R. Jerome --
inner acetylene unit as a cross-link website for polyimides / Tsutomu Takeichi and Masaaki Tanikawa --
Vapor-depositable polymers with low dielectric constants / J.A. Moore, Chi-I Lang, T.-M. Lu, and G.-R. Yang --
Plasma polymerization in direct present glow: characterization of plasma-polymerized motion pictures of benzene and fluorinated derivatives / Toshihiro Suwa, Mitsutoshi Jikei, Masa-aki Kakimoto, and Yoshio Imai --
Syntheses and houses of allylated poly(2,6-dimethyl-1,4-phenylene ether) / Yoshiyuki Ishii, Hiroji Oda, Takeshi Arai, and Teruo Katayose --
Synthesis and photochemistry of a 2,6-dialkoxyanthracene-containing, side-chain-substituted liquid-crystalline polymer / David Creed, Charles E. Hoyle, Anselm C. Griffin, Ying Liu, and Surapol Pankasem --
Hybrid polyimide-polyphenylenes by way of the Diels-Alder polymerization among biscyclopentadienones and ethynyl-terminated imides / Uday Kumar and Thomas X. Neenan --
Polysiloxane thermoplastic polyurethane transformed epoxy resins for digital program / Tsung-Han Ho and Chun-Shan Wang.
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Additional info for Microelectronics Technology: Polymers for Advanced Imaging and Packaging
Secondary reactions of the protecting groups, released in the resist film, were briefly discussed. 23 μm line/space resolution and a good focus latitude. Approximately two hours post exposure delay latitude and a thermal flow stability of 140°C were obtained with an optimized system. 3 μπι. Most commercial positive deep-UV resists are based on partially protected polyvinyl phenols. Unlike conventional diazonaphthoquinone/novolak technology, here an acid is liberated in a primary photochemical event which catalyzes deblocking of the masked phenols in a subsequent reaction.
Polymer properties and lithographic performance of two-component resist mixtures containing these polymers and a photo acid generator, were evaluated. Experimental Materials. Acetal and ketal protected resins were prepared according to a literature procedure (23) by an acid catalyzed addition reaction of enol ethers and polyvinyl phenol (PVP) as shown in Figure 1. Enol ethers were obtained commercially. 3,4Dihydro-6-methyl-2H-pyran (MDHP) was prepared in house according to Perkin (24). Figure 2 gives a selection of the enol ethers applied.
Presumably, this is due to the O-R' subunit being linked to the acetal carbon (R' and R'" together form a trimethylene bridge) which makes the back reaction (reformation of pyran-ring) likely to occur. Impact of the Protecting Group Structure on the Glass Transition. A lack inflowstability causes failures during pattern transfer in the plasma etch. On the other hand, it is desirable to have a process window available between Tg and decomposition, to be able to effectively anneal the resist film at temperatures high enough above Tg, without decomposing the material.