Microelectronics Technology: Polymers for Advanced Imaging by Christopher K. Ober (Editor), Scott A. MacDonald (Editor),

By Christopher K. Ober (Editor), Scott A. MacDonald (Editor), Takao Iwayanagi (Editor), Tadatomi Nishikubo (Editor) Elsa Reichmanis

content material: An research of strategy matters with chemically amplified optimistic resists / O. Nalamasu, A.G. Timko, Elsa Reichmanis, F.M. Houlihan, Anthony E. Novembre, R. Tarascon, N. Münzel, and S.G. Slater --
The annealing thought for environmental stabilization of chemical amplification resists / Hiroshi Ito, Greg Breyta, Donald C. Hofer, and R. Sooriyakumaran --
Structure-property dating of acetal-and ketal-blocked polyvinyl phenols as polymeric binder in two-component optimistic deep-UV photoresists / C. Mertesdorf, N. Münzel, P. Falcigno, H.J. Kirner, B. Nathal, H.T. Schacht, R. Schulz, S.G. Slater, and A. Zettler --
Lithographic results of acid diffusion in chemically amplified resists / C.A. Mack --
Acid diffusion in chemically amplified resists : the impression of prebaking and post-exposure baking temperature / Jiro Nakamura, Hiroshi Ban, and Akinobu Tanaka --
Correlation of the energy of photogenerated acid with the post-exposure hold up influence in positive-tone chemically amplified deep-UV resists / F.M. Houlihan, E. Chin, O. Nalamasu, J.M. Kometani, and R. Harley --
Following the acid : impact of acid floor depletion on phenolic polymers / James W. Thackeray, Mark D. Denison, Theodore H. Fedynyshyn, Doris Kang, and Roger Sinta --
Water-soluble onium salts: new category of acid turbines for chemical amplification confident resists / Toshio Sakamizu, Hiroshi Shiraishi, and Takumi Ueno --
Photoacid and photobase turbines: arylmethyl sulfones and benzhydrylammonium salts / J.E. Hanson, K.H. Jensen, N. Gargiulo, D. Motta, D.A. Pingor, Anthony E. Novembre, David A. Mixon, J.M. Kometani, and C. Knurek --
practical imaging with chemically amplified resists / Alexander M. Vekselman, Chunhao Zhang, and Graham D. Darling --
Hydrogen bonding in sulfone- and N-methylmaleimide-containing withstand polymers with hydroxystyrene and acetoxystyrene : two-dimensional NMR reports / Sharon A. Heffner, Mary E. Galvin, Elsa Reichmanis, Linda Gerena, and Peter A. Mirau --
NMR research of miscibility in novolac-poly(2-methyl-1-pentene sulfone) resists / Sharon A. Heffner, David A. Mixon, Anthony E. Novembre, and Peter A. Mirau --
Styrylmethylsulfonamides : flexible base-solubilizing elements of photoresist resins / Thomas X. Neenan, E.A. Chandross, J.M. Kometani, and O. Nalamasu --
4-Methanesulfonyloxystyrene : a method of enhancing the homes of tert-butoxycarbonyloxystyrene-based polymers for chemically amplified deep-UV resists / J.M. Kometani, F.M. Houlihan, Sharon A. Heffner, E. Chin, and O. Nalamasu --
Dienone-phenol rearrangement response : layout pathway for chemically amplified photoresists / Ying Jiang, John Maher, and David Bassett --
Single-layer withstand for ArF excimer laser publicity containing fragrant compounds / Tohru Ushirogouchi, Takuya Naito, Koji Asakawa, Naomi Shida, Makoto Nakase, and Tsukasa Tada --
layout concerns for 193-nm optimistic resists / Robert D. Allen, I-Y. Wan, Gregory M. Wallraff, Richard A. DiPietro, Donald C. Hofer, and Roderick R. Kunz --
Top-surface imaged resists for 193-nm lithography / Roderick R. Kunz, Susan C. Palmateer, Mark W. Horn, Anthony R. specialty, and Mordechai Rothschild --
Silicon-containing block copolymer withstand fabrics / Allen H. Gabor and Christopher ok. Ober --
A top-surface imaging strategy in response to the light-induced formation of dry-etch limitations / U. Schaedeli, M. Hofmann, E. Tinguely, and N. Münzel --
Plasma-developable photoresist procedure in keeping with polysiloxane formation on the irradiated floor : a liquid-phase deposition procedure / Masamitsu Shirai, Norihiko Nogi, Masahiro Tsunooka, and Takahiro Matsuo --
New polysiloxanes for chemically amplified face up to purposes / J.C. van de Grampel, R. Puyenbroek, A. Meetsma, B.A.C. Rousseeuw, and E.W.J.M. van der glide --
Environmentally pleasant polysilane photoresists / James V. seashore, Douglas A. Loy, Yu-Ling Hsiao, and Robert M. Waymouth --
Fluoropolymers with low dielectric constants : triallyl ether-hydrosiloxane resins / Henry S.-W. Hu, James R. Griffith, Leonard J. Buckley, and Arthur W. Snow --
Photophysics, photochemistry, and intramolecular cost move of polyimides / Masatoshi Hasegawa, Yoichi Shindo, and Tokuko Sugimura --
constitution, houses, and intermolecular cost move of polyimides / Masatoshi Hasegawa, Junichi Ishii, Takahumi Matano, Yoichi Shindo, Tokuko Sugimura, Takao Miwa, Mina Ishida, Yoshiaki Okabe, and Akio Takahashi --
program of polyisoimide as a polyimide precursor to polymer adhesives and photosensitive polymers / Amane Mochizuki and Mitsuru Ueda --
Polyimide nanofoams ready from styrenic block copolymers / J.L. Hedrick, T.P. Russell, C. Hawker, M. Sanchez, ok. Carter, Richard A. DiPietro, and R. Jerome --
inner acetylene unit as a cross-link website for polyimides / Tsutomu Takeichi and Masaaki Tanikawa --
Vapor-depositable polymers with low dielectric constants / J.A. Moore, Chi-I Lang, T.-M. Lu, and G.-R. Yang --
Plasma polymerization in direct present glow: characterization of plasma-polymerized motion pictures of benzene and fluorinated derivatives / Toshihiro Suwa, Mitsutoshi Jikei, Masa-aki Kakimoto, and Yoshio Imai --
Syntheses and houses of allylated poly(2,6-dimethyl-1,4-phenylene ether) / Yoshiyuki Ishii, Hiroji Oda, Takeshi Arai, and Teruo Katayose --
Synthesis and photochemistry of a 2,6-dialkoxyanthracene-containing, side-chain-substituted liquid-crystalline polymer / David Creed, Charles E. Hoyle, Anselm C. Griffin, Ying Liu, and Surapol Pankasem --
Hybrid polyimide-polyphenylenes by way of the Diels-Alder polymerization among biscyclopentadienones and ethynyl-terminated imides / Uday Kumar and Thomas X. Neenan --
Polysiloxane thermoplastic polyurethane transformed epoxy resins for digital program / Tsung-Han Ho and Chun-Shan Wang.

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Example text

Secondary reactions of the protecting groups, released in the resist film, were briefly discussed. 23 μm line/space resolution and a good focus latitude. Approximately two hours post exposure delay latitude and a thermal flow stability of 140°C were obtained with an optimized system. 3 μπι. Most commercial positive deep-UV resists are based on partially protected polyvinyl phenols. Unlike conventional diazonaphthoquinone/novolak technology, here an acid is liberated in a primary photochemical event which catalyzes deblocking of the masked phenols in a subsequent reaction.

Polymer properties and lithographic performance of two-component resist mixtures containing these polymers and a photo acid generator, were evaluated. Experimental Materials. Acetal and ketal protected resins were prepared according to a literature procedure (23) by an acid catalyzed addition reaction of enol ethers and polyvinyl phenol (PVP) as shown in Figure 1. Enol ethers were obtained commercially. 3,4Dihydro-6-methyl-2H-pyran (MDHP) was prepared in house according to Perkin (24). Figure 2 gives a selection of the enol ethers applied.

Presumably, this is due to the O-R' subunit being linked to the acetal carbon (R' and R'" together form a trimethylene bridge) which makes the back reaction (reformation of pyran-ring) likely to occur. Impact of the Protecting Group Structure on the Glass Transition. A lack inflowstability causes failures during pattern transfer in the plasma etch. On the other hand, it is desirable to have a process window available between Tg and decomposition, to be able to effectively anneal the resist film at temperatures high enough above Tg, without decomposing the material.

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