National Synchrotron Light Source - Activity Rpt [Oct 1994 -

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63. This is an indication that these layers have a volume conserving distortion of the unit cell and are mainly under biaxial compressive stress. Some scattering, however, is observed in the experimental data in Fig. 4. It is more pronounced for undoped GaN layers with larger c- and lower a-parameters. The data variation can be attributed to the presence of a hydrostatic stress component originated by point defects for undoped GaN layers and dopant for Si-doped GaN layers. 189 A) [18]. It is seen that biaxial stress can reverse its sign in heavily Si-doped GaN layers (NrND> 6x10 17 cm-3).

9(d-f)]. ~ 2~ E. Kuokstis, G. 01 0 ~ -002 0 a.. 03 m-o o4 a.. 04 ~~~~~~~~~~~~~~~~~~ 0 100 200 0 100 200 0 100 200 300 Temperature (K) Figure 9. 91 MW/cm 2 (open points), respectively. 9). Moreover, as ~ -001 presented in Fig. 04 different in AlGaN and AllnGaN. 1 mainly by two effects of an oppoExcitation Power Density (MW/cm site sign: i) band filling effect shifting the band to high energy side, Figure 10. Stokes shift of the photolumiand ii) band gap renormalization nescence peak in respect to the exciton due to many-body effects, which energy as a function of the excitation redshifts the PL band.

Phys. Stat. Sol. (a) 2001; 188:429. J. Solid State Electronics 2003; 47: I 075. E. : Condens. Matter 2002; 14: 13337. A. Mater. Res. Soc. Symp. Proc. 1998; 482:251. A. Mater. Res. Soc. Symp. Proc. 1. , Helava H. Phys. Stat. Sol. (a) 2003; 195: accepted for publication. Kuznetsov N. et al. Appl. Phys. Lett. 1999; 75: 3138. P. Solid State Electronics 2001; 45: 249. S. Lett. 1996; 69: 73. N. Appl. Phys. Lett. 2002: 81; 4721. W. Appl. Phys. , 2001; 78: 222. , Dmitriev V. Appl. , submitted for publication.

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