By R. A. Powell
This quantity collects jointly for the 1st time a sequence of in-depth, serious experiences of vital issues in dry etching, corresponding to dry processing of III-V compound semiconductors, dry etching of refractory steel silicides and dry etching aluminium and aluminium alloys. This topical layout offers the reader with extra specialized details and references than present in a common evaluate article. furthermore, it offers a extensive viewpoint which might in a different way must be received by way of interpreting loads of person study papers. an extra very important and certain function of this publication is the inclusion of an intensive literature overview of dry processing, compiled through seek of automated info bases. a subject matter index permits prepared entry to the most important issues raised in all of the chapters.
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Additional resources for Dry Etching for Microelectronics
A. Stockdale, 1968, J. Chem. Phys. 48, 1956. , and E. Kay, 1972, J. Appl. Phys. 43, 4965. F. Winters, 1979, J. Appl. Phys. 50, 3189. , 23 (4), 129. D. Cantos, 1981, Electron Device Lett. EDL-2, 222. L. Flamm, 1981, Solid State Technol. 24 (4), 161. , 1982, in: Plasma Processing, eds. J. G. S. Mathad (The Electrochemical Society, Pennington) p. 306. , A. Nef, W. Millikin, W. Cook and D. Baril, 1982, Solid State Technol. 25 (8), 84. S. J. O'Neill Jr. J. Tarns, III, 1981, J. Vac. Sci. Technol. 19, 709.
Even at low CC14 concentrations there is substantial Cl2 present and the side walls must be protected from isotropic reactions. 24 D. W. H. Bruce In this regard, it is possible that nitrogen promotes the formation of A1N on the sidewalls, and thereby inhibits lateral etching. The use of SiCl4 totally eliminates the presence of carbon introduced in the feed gas and the resulting problems (Sato and Nakamura, 1982a). It has been reported that under low pressure conditions the SiCl4 discharge does not create polymer films which contaminate the sample, the chamber or the vacuum pump.
W. C. (IEEE, New York) p. 578. , 1959, Sov. Phys. JETP 35, 783. , and M. Nowak, 1980, Semicond. Int. 3 (10), 139. A. Stockdale, 1968, J. Chem. Phys. 48, 1956. , and E. Kay, 1972, J. Appl. Phys. 43, 4965. F. Winters, 1979, J. Appl. Phys. 50, 3189. , 23 (4), 129. D. Cantos, 1981, Electron Device Lett. EDL-2, 222. L. Flamm, 1981, Solid State Technol. 24 (4), 161. , 1982, in: Plasma Processing, eds. J. G. S. Mathad (The Electrochemical Society, Pennington) p. 306. , A. Nef, W. Millikin, W. Cook and D.