Field Emission in Vacuum Microelectronics (Microdevices) by George N. Fursey

By George N. Fursey

Box emission is a phenomenon defined by means of quantum mechanics. Its emission strength is hundreds of thousands occasions greater than that of the other identified kinds of electron emission. these days this phenomenon is experiencing a brand new existence as a result of impressive functions within the atomic answer microscopy, in digital holography, and within the vacuum micro- and nanoelectronics as a rule. the most box emission homes, and a few so much impressive experimental proof and purposes, are defined during this ebook.

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R,vr]. 28) where a is the Stephan-Boltzmann constant; n is an external normal to the emitter boundary S; 7(Fs, Ts) is the emission current density depending on the emission surface temperature 7$ and the electric field strength Fs at the surface. siFs, 7s) is an average value of the energy evolved at the surface per emitted electron. This problem has been solved numerically using approximate formulae^^' ^^^ for j{Fs, Ts) and 6(Fs, 7s). 46 FIELD EMISSION IN VACUUM MICROELECTRONICS In Fig. 12, sets of isotherms showing the dependence of temperature on time are plotted.

Temperature (Fig. 16). The increase in current as a result of repeated application of voltage pulses of the same amplitude continues until breakdown sets in. Emission-induced migration is a key factor determining FE instability at maximum current densities with atomically clean cathode surfaces over a wide range of times (t ^ 10~^-10~^ sec). 5. THE HIGHEST FIELD EMISSION CURRENT DENSITIES ACHIEVED EXPERIMENTALLY As shown above, the FE current density attainable in practice is limited by heating of the emitter tip.

In general, experiment agrees with the theory. It is observed that the Nottingham effect plays a dominant role in emitter heating at intermediate temperatures. ^^^ observed considerable differences between the experimentally determined inversion temperature and the theoretical value. 8 eV). The experimental values were significantly lower than the calculated value—see Fig. 11. They^^^ suggest that the discrepancy is due to a difference between the conduction electron energy £cd and £F- A difference of just a few hundredths of an eV between Ecd and Fp^^^ can account for the observed lowering of T*.

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